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Characteristics of μc-Si:H for Si Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  21 February 2011

H. Fujioka ,
M. Ito  and
K. Takasaki
H. Fujioka
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara, Kawasaki 211, Japan
M. Ito
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara, Kawasaki 211, Japan
K. Takasaki
Affiliation:
Fujitsu Limited, 1015 Kamikodanaka, Nakahara, Kawasaki 211, Japan
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Abstract

To improve the thermal stability of the Si heterojunction bipolar transistors (HBTs), we studied the effect of carbon and fluorine doping on μc-Si:H characteristics. We found that carbon doping suppresses crystalline growth and increases the hydrogen concentration in the film, and that fluorine atoms are more thermally stable than hydrogen atoms. We confirmed that carbon or fluorine doping is promising for use with the μc-Si:H HBT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 341
Copyright
Copyright © Materials Research Society 1990

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References

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