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Characterisation of Epitaxial MBE and MOCVD GaAs DOPED with Donors or Acceptors Using FTIR Spectroscopy

Published online by Cambridge University Press:  26 February 2011

R. Murray ,
R. C. Newman ,
P. S. Nandhra ,
R. B. Beall ,
J. J. Harris  and
P. J. Wright
R. Murray
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, PO Box 220, Whiteknights, Reading, Berks. RG6 2AF, U.K.
R. C. Newman
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, PO Box 220, Whiteknights, Reading, Berks. RG6 2AF, U.K.
P. S. Nandhra
Affiliation:
J.J. Thomson Physical Laboratory, University of Reading, PO Box 220, Whiteknights, Reading, Berks. RG6 2AF, U.K.
R. B. Beall
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill, Surrey, U.K.
J. J. Harris
Affiliation:
Philips Research Laboratories, Cross Oak Lane, Redhill, Surrey, U.K.
P. J. Wright
Affiliation:
R.S.R.E., Gt. Malvern, Worcs., U.K.
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Abstract

Epitaxial layers of GaAs grown by MBE or MOCVD and doped with silicon impurities have been studied using FTIR spectroscopy. Vibrational modes are observed for Si(Ga), Si(As), Si(Ga)-Si(As) and a defect labelled SI-X. This latter defect appears to be responsible for the compensation effects found in some highly doped material. The Si(Ga) mode is modified in AlGaAs but understood in terms of a simple statistical model. Epitaxial GaAs layers doped with silicon or beryllium are passivated by exposing the samples to an RF hydrogen plasma which leads to the formation of Si-H and Be-H close pairs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 543
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCE

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