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Characterisation of Device Grade Soi Structures formed by Implantation of High Doses of Oxygen

Published online by Cambridge University Press:  25 February 2011

P.L.F. Hemment ,
E.A. Maydell-Ondrusz ,
K.G. Stephens ,
R.P. Arrowsmith ,
A.C. Glaccum ,
J.A. Kilner  and
J.B. Butcher
P.L.F. Hemment
Affiliation:
Dept. of Electronic & Electrical Engineering, University of Surrey, U.K.
E.A. Maydell-Ondrusz
Affiliation:
Dept. of Electronic & Electrical Engineering, University of Surrey, U.K.
K.G. Stephens
Affiliation:
Dept. of Electronic & Electrical Engineering, University of Surrey, U.K.
R.P. Arrowsmith
Affiliation:
British Telecom Research Laboratory, Martlesham Heath;
A.C. Glaccum
Affiliation:
British Telecom Research Laboratory, Martlesham Heath;
J.A. Kilner
Affiliation:
Imperial College, London;
J.B. Butcher
Affiliation:
Middlesex Polytechnic, Bounds Green, London.
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Abstract

SOI structures have been formed in (100) silicon by implanting 400 keV molecular oxygen to a dose of l.8×l018 O atoms cm−2. These samples were annealed at 1150°C for 2 hours with a SILOX cap. Oxygen depth profiles have been determined by SIMS and wafers implanted at about 500°C have been characterized by studying the regrowth kinetics, As drive in and oxidation rate in the top silicon overlay.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 281
Copyright
Copyright © Materials Research Society 1984

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References

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