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CeO2/YSZ and SrTiO3/YSZ Double Buffer Layers Deposited on Si(100) by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

F. Sanchez ,
R. Aguiar ,
C. Ferrater ,
D. Peiro ,
X. Queralt  and
M. Varela
F. Sanchez
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
R. Aguiar
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
C. Ferrater
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
D. Peiro
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
X. Queralt
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
M. Varela
Affiliation:
Universitat de Barcelona, Departament de Ffsica Aplicada i Electrbnica, Avda. Diagonal 647, E-08028 Barcelona, Spain
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Abstract

Yttria stabilized zirconia (YSZ), SrTiO3 and CeO2 thin films have been widely used as buffer layers in YBa2Cu3O7-x (YBCO) deposition on silicon substrates. YBCO superconducting properties are limited by lattice mismatches between YSZ and YBCO, and chemical interaction of CeO2 and SrTiO3 with silicon. In order to avoid these problems we have deposited CeO2/YSZ/Si(100) and SrTiO3/YSZ/Si(100) bilayers by laser ablation. Wide temperature and pressure ranges have been studied. The influence of the intermediate layer on the CeO2 and SrTiO3 films properties has been studied. Previous studies were performed on films of each material on Si(100) and YSZ(100) single crystals. The surface of the films and bilayers is smooth without microcracks and only few droplets are found. Only small interdiffusion is observed in all the cases. Texture of the films changes with deposition conditions. Epitaxial growth of CeO2 has been found both on YSZ(100) single crystals and YSZ buffers on Si(100).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 157
Copyright
Copyright © Materials Research Society 1994

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References

1. Tiwari, P., Kanetkar, S.M., Sharan, S. and Narayan, J., Appl. Phys. Lett. 57, 1805 (1990).Google Scholar
2. Habermeier, H.U., Beddies, G., Leybold, B., Lu, G. and Wagner, G., Physica C 180, 17 (1991).Google Scholar
3. Luo, L., Wu, X.D., Dye, R.C., Muenchausen, R.E., Foltyn, S.R., Coulter, Y., Maggiore, C.J. and Inoue, T., Appl. Phys. Lett. 59, 2043 (1991).Google Scholar
4. SAnchez, F., Varela, M., Queralt, X., Garcia-Cuenca, M.V., Aguiar, R. and Morenza, J.L., Physica C 195, 47 (1992).Google Scholar
5. SAnchez, F., Varela, M., Queralt, X., Aguiar, R. and Morenza, J.L., Appl. Phys. Lett. 61, 2228 (1992).CrossRefGoogle Scholar
6. Wittanachchi, S., Patel, S., Kwok, H.S. and Shaw, D.T., Appl. Phys. Lett. 54, 578 (1989).CrossRefGoogle Scholar
7. Fork, D.K., Ponce, F.A., Tramontana, J.C. and Geballe, T.H., Appl. Phys. Lett. 58, 2294 (1991).Google Scholar
8. Fork, D.K., Garrison, S.M., Hawley, M. and Geballe, T.H., J. Mater. Res. 7, 1641 (1992).Google Scholar
9. Copetti, C.A., Schubert, J., Zander, W., Soltner, H., Popppe, U. and Buchal, Ch., J. Appl. Phys. 73, 1339 (1993).CrossRefGoogle Scholar
10. Prusseit, W., Corsépius, S., Berberich, P., Kinder, H., J. All. and Comp. 195, 223 (1993).Google Scholar
11. Copetti, C.A., Soltner, H., Schubert, J., Zander, W., Hollricher, O., Buchal, Ch., Schulz, H., Tellmann, N. and Klein, N., Appl. Phys. Lett. 63, 1429 (1993).Google Scholar
12. Wu, X.D., Dye, R.C., Muenchausen, R.E., Foltyn, S.R., Maley, M., Rollet, A.D., Garcia, A.R. and Nogar, N.S., Appl. Phys. Lett. 58, 2165 (1991).CrossRefGoogle Scholar
13. Foltyn, S.R., Tiwari, P., Dye, R.C., Le, M.Q. and Wu, X.D., Appl. Phys. Lett. 63, 1848 (1993).CrossRefGoogle Scholar
14. Cheung, J.T., Gergis, I., James, M. and DeWames, R.E., Appl. Phys. Lett. 60, 3180 (1992).Google Scholar
15. Wu, X.D., Luo, L., Muenchausen, R.E., Springer, K.N. and Foltyn, S.R., Appl. Phys. Lett. 60, 1381 (1992).CrossRefGoogle Scholar