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Cathodoluminescence from Inx Ga1−x as Layers Grown on GaAs Using a Transmission Electron Microscope

Published online by Cambridge University Press:  10 February 2011

N. Yamamoto ,
T. Mita ,
S. Heun ,
A. Franciosi  and
J.-M. Bonard
N. Yamamoto
Affiliation:
Dept. Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152–8551, Japan
T. Mita
Affiliation:
Dept. Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152–8551, Japan
S. Heun
Affiliation:
Laboratonro TASC-INFM, Trieste, Italy
A. Franciosi
Affiliation:
Laboratonro TASC-INFM, Trieste, Italy
J.-M. Bonard
Affiliation:
Dept. de Physique, EPFL, Lausanne, Switzerland
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Abstract

InxGa1−xAs epilayers grown on GaAs(100) were studied by cathodoluminescence (CL) spectroscopy and imaging technique with 0.8 nm spectral resolution, using a transmission electron microscope. Linear features appear in the monochromatic CL image taken by the emission from the InxGa1−x.As layers, and do not appear in those from the GaAs layers. There is no direct correlation between the dark-line contrast in the panchromatic CL image (due to misfit dislocations) and the strong line contrast in the monochromatic CL images of the InxGa1−xAs layers. A peak wavelength shift in the CL spectrum was observed as the electron probe was moved across the linear features. The linear features also appear in a thin sample where the misfit dislocations are removed by ion milling, which clearly reveals that the strong line contrast is not directly due to the misfit dislocation. From those results the linear features in the monochromatic CL image are considered to be due to compositional fluctuations of the In concentration in the InxGa1−xAs layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 245
Copyright
Copyright © Materials Research Society 2000

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References

1. Heun, S., Lantier, R., Paggel, J. J., Sorba, L., Rubini, S., Bonanni, B., Franciosi, A., Lomascolo, M., Cingolani, R., Bonard, J.-M., and Ganière, J.-D. Surf. Rev. Lett. 5, 693(1998).Google Scholar
2. Heun, S., Paggel, J. J., Sorba, L., Rubini, S., Bonanni, A., Lantier, R., Lazzarino, M., Bonanni, B., Franciosi, A., Bonard, J.-M., Ganière, J.-D., Zhuang, Y., and Bauer, G., J. Appl. Phys. 83, 2504(1998).Google Scholar
3. Rammonhan, K., Tang, Y., Rich, D. H., Goldman, R. S., Wieder, H. H., and Kavanagh, K. L., Phys. Rev. B51, 5033 (1995).Google Scholar
4. Mitsui, T., Yamamoto, N., Tadokoro, T., and Ohta, S., J. Appl. Phys. 80, 6972(1996).Google Scholar