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Carrier Transport in Ultra-Thin Nano/Polycrystalline Silicon Films and Nanowires

Published online by Cambridge University Press:  17 March 2011

Toshio Kamiya ,
Yong T. Tan ,
Yoshikazu Furuta ,
Hiroshi Mizuta ,
Zahid A.K. Durrania  and
Haroon Ahmed
Toshio Kamiya
Affiliation:
Materials and Structure Laboratory, Tokyo Institute of Technology, Japan Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, UK CREST, JST, Japan
Yong T. Tan
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, UK CREST, JST, Japan
Yoshikazu Furuta
Affiliation:
Hitachi-Cambridge Laboratory, UK CREST, JST, Japan
Hiroshi Mizuta
Affiliation:
Hitachi-Cambridge Laboratory, UK CREST, JST, Japan
Zahid A.K. Durrania
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, UK CREST, JST, Japan
Haroon Ahmed
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, UK CREST, JST, Japan
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Abstract

Carrier transport was investigated in two different types of ultra-thin silicon films, polycrystalline silicon (poly-Si) films with large grains > 20 nm in size and hydrogenated nanocrystalline silicon (nc-Si:H) films with grains 4 nm – 8 nm in size. It was found that there were local non-uniformities in grain boundary potential barriers in both types of films. Single-electron charging effects were observed in 30 nm × 30 nm nanowires fabricated in 30 nm-thick nc-Si:H films, where the electrons were confined in crystalline silicon grains encapsulated by amorphous silicon. In contrast, the poly-Si nanowires of similar dimensions showed thermionic emission over the grain boundary potential barriers formed by carrier trapping in grain boundary defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A16.2
Copyright
Copyright © Materials Research Society 2001

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References

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