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Breathing Mode Lattice Relaxation Associated With Carrier Emission and Capture by Deep Electronic Levels in Silicon

Published online by Cambridge University Press:  26 February 2011

G. A. Samara
G. A. Samara*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
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Abstract

The breathing mode (volume) lattice relaxations associated with carrier emission and capture are evaluated for a variety of deep levels in silicon using a recently proposed method based on high pressure measurements of the emission rates and capture cross sections. Included are 1) the vacancy-like acceptor levels associated with the oxygen-vacancy pair (or A-center) and the gold, platinum and palladium impurities, 2) the chalcogenide donors in their singly- and doubly-charged states and 3) a number of 3d transition metal donors. The signs and magnitudes (which range from -O to 5A 3/emitted carrier) of these relaxations are discussed in terms of models for the impurities and defects responsible for the associated levels. The results on the chalcogenides are compared with recent theoretical calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 111
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.See e.g., Deep Centers in Semiconductors edited by Pantelides, S. T., Gordon and Breach Science Publishers, New York, 1986Google Scholar
2.Samara, G. A. and Barnes, C. E., Phys. Rev. Lett. 57, 2069 (1986). The analysis in this paper needs to incorporate the effect of the pressure dependence of the Si bandgap as discussed in Phys. Rev. B35, 7575(1987): 36, 4841(1987).Google Scholar
3.Scheffler, M., Beeler, F., Jepsen, O., Gunnarsson, O., Andersen, O. K. and Bachelet, G. B., Proc. 13th Int'l Conf. on Defects in Semiconductors, Edited by Kimerling, L. C. and Parsey, J. M. Jr, The Metallurgical Society of AIME, 1985, p. 45. See also Phys. Rev. B31, 6541(1985).Google Scholar
4.Watkins, G. D., Physica 117B and 118B 9(1983) and references therein.Google Scholar
5.Stöffler, W. and Weber, J., Phys. Rev. B33, 8892(1986): and in Defects in Semiconductors, Edited by H. J. von Bardeleben, Materials Science Forum, Vol.10–12 Trans. Tech. Publications Ltd., Switzerland. (1986) p. 705.Google Scholar
6.Jantsch, W., Winstel, K., Kumagai, O. and Vogl, P., Phys. Rev. B 25, 5515(1982); Physica 117B and 118B.Google Scholar
7.Wunstel, K., Kumagai, O., Wagner, P. and Jantsch, W., Appl. Phys. A27, 251(1982).Google Scholar
8.Samara, G. A., to be published.Google Scholar