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Bonding Configurations at Epitaxial CaF2/Si Interfaces

Published online by Cambridge University Press:  21 February 2011

J. L. Batstone  and
Julia M. Phillips
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974, USA
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974, USA
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Abstract

Determination of the bonding configuration at the epitaxial CaF2/Si(111) interface has revealed Ca-Si bonds in the interfacial plane. Removal of an unstable layer of F from the interface occurs during a rapid thermal anneal. In comparison, the CaF2/Si(100) interface is not smooth, making assignment of interface bonding configurations ambiguous. After a rapid thermal anneal, evidence for an intermediate interfacial phase is observed on Si (100). This phase does not occur on Si (111).

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 351
Copyright
Copyright © Materials Research Society 1989

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References

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