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Bonding and Release of Hydrogen in a-Si:C:H Alloys

Published online by Cambridge University Press:  28 February 2011

W. Beyer ,
H. Wagner  and
H. Mell
W. Beyer
Affiliation:
Institut fUr Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Julich, Federal Republic of Germany
H. Wagner
Affiliation:
Institut fUr Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage Jülich GmbH, D-5170 Julich, Federal Republic of Germany
H. Mell
Affiliation:
Fachbereich Physik, Univ. Marburg, Renthof 5, D-3550 Marburg, Federal Republic of Germany
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Abstract

Hydrogen evolution and infrared absorption studies of a-Si:C:H films prepared from mixtures of hydrocarbon (CH4' C2H6' C2H4) and silane gases (SiH4 'Si2H6)by the glow-discharge process show that both the absolute hydrogen content and the hydrogen bonding is uniquely determined by the carbon content. Up to a carbon concentration of ∼45 % the widening of the optical gap is mainly due to an increase of the hydrogen content. For a hydrogen density NH > 1- 2x1022cm-3 the incorporated hydrogen atoms lead to the formation of voids, resulting in thermal instability of the bonded hydrogen and in a deterioration of the electronic quality of the amorphous material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 189
Copyright
Copyright © Materials Research Society 1985

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