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The Behavior of Polysilicon Thin Film Stress and Structure Under Rapid Thermal Processing Conditions

Published online by Cambridge University Press:  22 February 2011

Walter Huber ,
G. Borionetti  and
C. Villani
Walter Huber
Affiliation:
DNS Electronic Materials, Viale Gherzi, 31, 28100 Novara, Italy
G. Borionetti
Affiliation:
DNS Electronic Materials, Viale Gherzi, 31, 28100 Novara, Italy
C. Villani
Affiliation:
DNS Electronic Materials, Viale Gherzi, 31, 28100 Novara, Italy
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Abstract

Undoped polysilicon layers deposited at 620 °C onto a silicon wafer induce a compressive stress of approximately 1 × 109 dynes/cm2 resulting in a bow of the wafer. This stress can be relieved by rapid annealing at temperatures above 1000 °C. A comparison with conventional furnace annealing reveals that the stress relaxation is a weak function of time and strongly depends on temperature. Rapid thermal processing also causes immediate rearrangement of the film structure, as observed by X-ray diffraction. Although both stress and film texture change with annealing, no conclusive relationship is observed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 389
Copyright
Copyright © Materials Research Society 1989

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