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Barrier-Controlled Transport in Doped Microcrystalline Si

Published online by Cambridge University Press:  17 March 2011

S. Brehme ,
P. Kanschat  and
W. Fuhs
S. Brehme
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
P. Kanschat
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
W. Fuhs
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

Thin μc-Si films doped with P and B are grown on glass at temperatures between 300 °C and 400 °C by electron cyclotron resonance chemical vapor deposition (ECR-CVD). Hall mobilities in the films are found to be temperature-activated with activation energies being correlated to the doping concentrations. The in-grain mobility as determined by an electron spin resonance investigation is much higher than the Hall mobility the values of which are typically near 1 cm2/Vs at 300 K. The experimental results suggest that transport is dominated by potential barriers at the grain boundaries. An extended Seto model is used to probe the interface trap distribution. We obtained the best fitting results by assuming band-tail states decaying exponentially from the respective band edges.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A32.2
Copyright
Copyright © Materials Research Society 2000

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References

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