Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-28T23:53:02.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Barrier Properties of Tasi2 in Contact With Al-Metallization

Published online by Cambridge University Press:  22 February 2011

F. Neppl  and
U. Schwabe
F. Neppl
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D 8000 Munich 83, FRG
U. Schwabe
Affiliation:
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D 8000 Munich 83, FRG
Get access

Abstract

The reaction between cosputtered amorphous and polycrystalline tantalum silicide with Al-Si-metallization was investigated by means of Schottky and ohmic contacts on Si. Diffusson of Al and Si across the silicide was impeded up to 475 °C, as long as the silicide films contained excess Ta with respect to the TaSi2 stoichiometry. The results show that Al-Si with a thin Ta-rich tantalum silicide underlayer provides a VLSI-metallization with considerably reduced contact resistance, particularly for small contacts, and low Schottky barrier to n-Si without significant Si consumption from the substrate

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 587
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

/1/ Nicolet, M.-A., Lau, S.S. in “VLSI Electronics-Microstructure Science”, Vol. 6, ed. Einspruch, N.G., Larrabee, G.B., Academic Press, New York 1983, p. 390.Google Scholar
/2/ Murarka, S.P., J. Vac. Sci. Technol. 17 (4), 775 (1980).Google Scholar
/3/ Hosack, H.H., Appl. Phys. Lett. 21, No. 6, 256 (1972).Google Scholar
/4/ van Gurp, G.J., Reukers, W.M., J.-Appl. Phys. 50 (11), 6923 (1979).CrossRefGoogle Scholar
/5/ Anantha, N.G., Ashar, K.G., IBM J. Res. Dev. 15 442 (1971).Google Scholar
/6/ Oppolzer, H., Neppl, F., Hieber, K., paper C 4.7,these proceedings.Google Scholar
/7/ e.g. Sze, S.M., “Physics of Semiconductor Devices”, Wiley Interscience, New York 1981, p. 262.Google Scholar
/8/ Ohdomari, I., Tu, K.N., J. Appl. Phys. 51 (7), 3735 (1980)Google Scholar
/9/ Nicolet, M.-A., Bartur, M., J. Vac. Sci. Technol. 19 (3) 786 (1981).Google Scholar
/10/ Murrmann, H., Widmann, D., Solid State Electronics 12, 879 (1969).Google Scholar
/11/ Berger, H.H., J. Electochem. Soc. 119, No. 4, 509 (1972).Google Scholar
/12/ e.g. Nowicki, R.S., Nicolet, M.A., Thin Solid Films, 96, 317 (1982).Google Scholar
/13/ Tu, K.N., J. Vac. Sci, Technol. 19 (3), 766 (1981).Google Scholar