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Band Gap Shift of GaN under Uniaxial Strain Compression

Published online by Cambridge University Press:  21 March 2011

H. Y. Peng ,
M. D. McCluskey ,
Y. M. Gupta ,
M. Kneissl  and
N. M. Johnson
H. Y. Peng
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
M. D. McCluskey
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
Y. M. Gupta
Affiliation:
Institute for Shock Physics and Department of Physics, Washington State University, Pullman, WA 99164-2816, U.S.A.
M. Kneissl
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304, U.S.A.
N. M. Johnson
Affiliation:
Xerox PARC, 3333 Coyote Hill Rd., Palo Alto, CA 94304, U.S.A.
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Abstract

The band-gap shift of GaN:Mg epilayers on (0001)-oriented sapphire was studied as a function of uniaxial strain compression along the c-axis using time-resolved, optical absorption measurements in shock wave experiments. For longitudinal stresses ranging from 4 to 14 GPa, the band gap shift is approximately 0.026 eV/GPa. Combining this result with the known behavior of wurtzite GaN under hydrostatic pressure and biaxial stress, a new set of deformation potentials has been estimated: acz-D1 = -10.2 eV, act-D2 = -7.9 eV, D3 = 1.33 eV and D4 = -0.74 eV. A slow band gap shift is also observed following the immediate band gap increase upon impact. This phenomenon can be explained by a time-dependent screening of the piezoelectric field.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.49.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Kisielowski, C., Krüger, J., Ruvimov, S., Suski, T., Ager, J. W. III, Jones, E., Liliental, Z. Weber, Rubin, M., and Weber, E. R., Phys. Rev. B 54, 17745 (1996).Google Scholar
2. Bykhovski, A., Gelmont, B., Shur, M., and Khan, A., J. Appl. Phys. 77, 1616 (1995).10.1063/1.358916Google Scholar
3. Perlin, P., Mattos, L., Shapiro, N. A., Kruger, J., Wong, W. S., Sands, T., Cheung, N. W. and Weber, E. R., J. Appl. Phys. 85, 2385 (1999).10.1063/1.369554Google Scholar
4. Gil, B., Briot, O., and Aulombard, R. L., Phys. Rev. B 52, R17028 (1995).Google Scholar
5. Shan, W., Hauenstein, R. J., Fischer, A. J., Song, J. J., Perry, W. G., Bremser, M. D., Davis, R. F., and Goldenberg, B., Phys. Rev. B 54, 13460 (1996).10.1103/PhysRevB.54.13460Google Scholar
6. Chichibu, S., Azuhata, T., Sota, T., Amano, H. and Akasaki, I., Appl. Phys. Lett. 70, 2085 (1997).10.1063/1.118958Google Scholar
7. Kumagai, M., Chuang, S. L. and Ando, H., Phys. Rev. B 57, 15303 (1998).10.1103/PhysRevB.57.15303Google Scholar
8. Winey, J. M. and Gupta, Y. M., J. Phys. Chem. A 101, 9333 (1997).10.1021/jp971833nGoogle Scholar
9. Polian, A., Grimsditch, M., and Grzegory, I., J. Appl. Phys. 79, 3343 (1996).Google Scholar
10. Suzuki, M. and Uenoyama, T., Jpn. J. Appl. Phys. 35, 1420 (1996).10.1143/JJAP.35.1420Google Scholar
11. Suzuki, M. and Uenoyama, T., J. Appl. Phys. 80, 6868 (1996).Google Scholar