Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-29T00:04:25.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomistic Mechanisms of Dislocation Mobility in Silicon

Published online by Cambridge University Press:  15 February 2011

J. F. Justo ,
V. V. Bulatov  and
S. Yip
J. F. Justo
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
V. V. Bulatov
Affiliation:
Department of Mechanical Engineering, MIT, Cambridge, MA 02139
S. Yip
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
Get access

Abstract

We study the leading mechanisms of kink mobility of 30° and 90°-partial dislocations in the glide set {111} of silicon. The calculations are performed using a new empirical potential for Si, which has been shown to give an accurate description of core properties of partial dislocations [1], to study mechanisms of kink formation and migration. In the case of 30°-partial dislocation, two kinds of kinks are identified, left and right, which have different structures, formation energies, and mobilities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 505
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Justo, J. F., Bazant, M. Z., Kaxiras, E., Bulatov, V. V., and Yip, S. (to be published).Google Scholar
[2] Alexander, H., in Dislocation in Solids, edited by Nabarro, F. R. N., Vol. 7, (North Holland, Amsterdam, 1986), pp. 115.Google Scholar
[3] Duesbery, M. S. and Richardson, G. Y., CRC Crit. Rev. Solid State Mater. Sci. 17, 1 (1991).Google Scholar
[4] Hirth, J. P. and Lothe, J., Theory of Dislocations, (Wiley, 1982), pp. 857.Google Scholar
[5] Bulatov, V. V., Yip, S., and Argon, A. S., Phil. Mag. A 72, 453–496 (1995).Google Scholar
[6] Bigger, J. R. K., Mclnnes, D. A., Sutton, A. P., Payne, M. C., Stich, I., King-Smith, R. D., Bird, D. M., and Clarke, L. J., Phys. Rev. Lett. 69, 2224 (1992).Google Scholar
[7] Nunes, R.W., Bennetto, J., and Vanderbilt, D., Phys. Rev. Lett. 77, 1516 (1996).Google Scholar
[8] Arias, T. A., Bulatov, V. V., Yip, S., and Argon, A. S. (unpublished).Google Scholar
[9] Duesbery, M.S., Joos, B., and Michel, D.J., Phys. Rev. B 43, 5143 (1991).Google Scholar
[10] Parrinello, M., and Rahman, A., J. Chem. Phys. 76, 2662 (1982).Google Scholar
[11] Alexander, H. and Teichler, H., in Materials Science and Technology, Eds. Cahn, R. W., Haasen, P., and Kramer, E. J., vol. 4 (VCH Weinheim, 1991), pp. 249–319.Google Scholar
[12] Farber, B. Ya., Iunin, Yu. L., and Nikitenko, V. I., Phys. Stat. Sol. (a) 97, 469 (1986).Google Scholar