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Atomic-Layer Cleaving and Non-contact Thinning and Thickening for Fabrication of Laminated Electronic and Photonic Materials

Published online by Cambridge University Press:  21 March 2011

Michael I. Current ,
Shari N. Farrens ,
Martin Fuerfanger ,
Sien Kang ,
Harry R. Kirk ,
Igor J. Malik ,
Lucia Feng  and
Francois J. Henley
Michael I. Current
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Shari N. Farrens
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Martin Fuerfanger
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Sien Kang
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Harry R. Kirk
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Igor J. Malik
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Lucia Feng
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
Francois J. Henley
Affiliation:
Silicon Genesis, Campbell, CA 95008, USA
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Abstract

An innovative suite of layer transfer technologies, collectively called the NanoCleaveTM Process, includes a non-porous cleave plane utilizing a compressive strain layer, growth of a high purity, crystalline device layer, plasma activation coupled with vacuum bonding, room-temperature cleaving along an atomically flat plane and a variety of post-cleave CVD processes to thicken or thin the device layer to a desired final thickness is described. Applications of this process include fabrication of SOI wafers containing Si and SiGe alloy device layers.

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References

REFERENCES

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