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Atomic Structures of Planar Defects in Si and GaAs

Published online by Cambridge University Press:  03 September 2012

S. Takeda ,
S. Muto  and
M. Hirata
S. Takeda
Affiliation:
Department of Physics, College of General Education, Osaka University, Toyonaka, Osaka 560
S. Muto
Affiliation:
Department of Physics, College of General Education, Osaka University, Toyonaka, Osaka 560
M. Hirata
Affiliation:
Department of Physics, College of General Education, Osaka University, Toyonaka, Osaka 560
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Abstract

Atomic structures of planar defects in Si and GaAs have been studied by TEM. An HREM image of the edge of {113} planar defect has been obtained with <110> incidence. An analysis of the image has showed diat the edge consists of 5-, 6- and 7-membered rings without dangling bond. Anisotropie morphology of the defect could be understood from the model proposed in this report. Weak diffuse scattering and an extinction rule in diffraction patterns from the defect have been found. The experimental evidence has supported the model of the {113} defect.

A planar defect on {111} in a heavily Si doped GaAs has been studied. The result has indicated that Si precipitates on the two {111} net planes inserted in the GaAs matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 209
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Ness, E. and Washburn, J., J. Appl. Phys., 42, 3559 (1972).CrossRefGoogle Scholar
[2] Matthews, M. and Ashby, S. J., Phil. Mag. A 27 1313 (1973).Google Scholar
[3] Ferreira Lima, C. A. and Howie, A., Phil Mag. 34, 1057 (1976).CrossRefGoogle Scholar
[4] Salisbury, I. G. and Loretto, M. H., Phil. Mag. A 39, 317 (1979).Google Scholar
[5] Aseev, A. L. and Astakhov, V. M., Sov. Phys. Solid State 24, 1163 (1982).Google Scholar
[6] Asahi, H., Oshima, R. and Fujita, F. E., Inst. Conf. Ser. No 59, 455 (1981).Google Scholar
[7] Hirabayashi, M., Hiraga, K. and Shindo, D., Ultramicroscopy 9, 197 (1982).Google Scholar
[8] Pasemann, M., Hoehl, D., Aseev, A. L. & Pchelyakov, O. P., Phys. Status Solidi a 80, 135 (1983).Google Scholar
[9] Desseaux-Thibault, J., Bourret, A. and Penisson, J. M., Inst. Phys. Conf. Ser. No 67, 71 (1983).Google Scholar
[10] Bartsch, H., Hoehl, D. and Kastner, G.: Phys. Status solidi a 83, 543 (1984).CrossRefGoogle Scholar
[11] Bourret, A.: Inst. Conf. Ser. No. 87, 39 (1987).Google Scholar
[12] Bender, H. and Vanhellemont, J.: Phys. Status solidi a107, 455 (1988).CrossRefGoogle Scholar
[13] Takeda, S.: Jpn. J. Appl. Phys., 30 (1991) L639.CrossRefGoogle Scholar
[14] Takeda, S., Hirata, M., Hua, G. C., Hiraga, K. and Kiritani, M., Ultramicroscopy 39, 180 (1991).Google Scholar
[15] Hornstra, J., J. Phys. Chem. Solids, 5, 129 (1958).CrossRefGoogle Scholar
[16] Muto, S., Takeda, S., Hirata, M., Fujii, K. and Ibe, K., to be published in Phil. Mag. A.Google Scholar