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The Atomic Structure of the {1010} Inversion Domains in GaN/Sapphire Layers

Published online by Cambridge University Press:  10 February 2011

V. Potin ,
P. Ruterana ,
G. Nouet ,
A. Salvador  and
H. Morkoç
V. Potin
Affiliation:
Laboratoire d'Études et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin 14050 Caen Cedex, France.
P. Ruterana
Affiliation:
Laboratoire d'Études et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin 14050 Caen Cedex, France.
G. Nouet
Affiliation:
Laboratoire d'Études et de Recherches sur les Matériaux, Unité associée CNRS 6004, Institut des Sciences de la Matière et du Rayonnement, 6 Blvd Maréchal Juin 14050 Caen Cedex, France.
A. Salvador
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL61801, USA
H. Morkoç
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL61801, USA
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Abstract

Nanometric inversion domains in GaN/Al2O3 layers have been investigated using HREM. They were found to be limited by {1010} planes and to cross the entire epitaxial layer. It has been possible, using extensive image simulation and matching to discriminate between possible atomic models for the boundary plane. It is shown that the inversion domain boundaries correspond to a Holt type model containing wrong bonds (Ga-Ga, N-N), and in that plane, each atom exhibits two such bonds. This probably can explain the small size of the domains (5–20 nm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 323
Copyright
Copyright © Materials Research Society 1997

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References

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