Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-02-10T11:41:16.904Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Hydrogen Passivation of High Energy Hydrogen Implants

Published online by Cambridge University Press:  16 February 2011

K. Srikanth ,
J. Shenal  and
S. Ashok
K. Srikanth
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
J. Shenal
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
S. Ashok
Affiliation:
Center for Electronic Materials and Processing, Department of Engineering Science, Pennsylvania State University, University Park, PA 16802.
Get access

Abstract

High-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 241
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hallen, A., Ph. D thesis, Uppsala University, Sweden 1990.Google Scholar
2. Chen, J. W. and Milnes, A. G., Ann. Rev. Mater. Sci., 10, 157 (1980).Google Scholar
3. Wondrak, W. and Silber, D., Physica, 129B, 322 (1985).Google Scholar
4. Seager, C. H., Anderson, R. A., Panitz, J. K. G., J. Mat. Res. 2, 96 (1987).Google Scholar
5. Johnson, N. M., Doland, C., Ponce, F., Walker, J. and Anderson, G., Physica B, 170 (1991).Google Scholar
6. Ringel, S. A., Chien, H.-C. and Ashok, S., Appl. Phys. Lett. 49, 728 (1986)Google Scholar
7. Ashok, S. and Srikanth, K., J. Appl. Phys. 66, 1491 (1989).Google Scholar
8. Mogro-Campero, A., Chang, M. F. and Benjamin, J. L., J. Electrochem. Soc. 135, 172 (1988).Google Scholar
9. Tavendale, A. J., Williams, A. A. and Pearton, S. J., Appl. Phys. Lett., 48, 590 (1986).Google Scholar
10. Cappizzini and Matinga, A., Appl. Phys. Lett. 50, 918 (1987).Google Scholar