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Atomic Force Microscopy Study of Hard Coating Films Prepared by Pulsed Laser Deposition Method

Published online by Cambridge University Press:  10 February 2011

Hsieh-Li Chan ,
Ashok Kumar ,
L. Sanderson  and
J. J. Weimer
Hsieh-Li Chan
Affiliation:
Department of Electrical Engineering, University of South Alabama, Mobile, AL 36688
Ashok Kumar
Affiliation:
Department of Electrical Engineering, University of South Alabama, Mobile, AL 36688
L. Sanderson
Affiliation:
Department of Chemistry and Materials Engineering, University of Alabama in Huntsville, Huntsville, AL 35899
J. J. Weimer
Affiliation:
Department of Chemistry and Materials Engineering, University of Alabama in Huntsville, Huntsville, AL 35899
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Abstract

Aluminum nitride (AIN), silicon nitride (Si3N4), and silicon carbide (SIC) thin films have been snthesized using pulsed laser deposition (PLD) techniques. AIN and Si3N4 films were deposited on Si (100) substrates at different temperatures (room temperature to 600°C) and partial pressures (15 mTorr N2 to 200 mTorr N2). SiC films were deposited on Si (100) substrates at different temperatures (room temperature to 400°C) in high vacuum. The atomic force microscopy (AFM) is a useful tool for studying the surface topography of these technologically interesting thin film surfaces. This paper discusses in detail AFM analysis of thin film coatings.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 487
Copyright
Copyright © Materials Research Society 1997

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