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Assessment of Weak Si-Si Bond Breaking Mechanisms of the Staebler-Wronski Effect

Published online by Cambridge University Press:  21 February 2011

R. Biswas ,
I. Kwon  and
C. M. Soukoulis
R. Biswas
Affiliation:
Microelectronics Research Center, and Department of Physics, Iowa State University, Ames, Iowa 50011
I. Kwon
Affiliation:
Microelectronics Research Center, and Department of Physics, Iowa State University, Ames, Iowa 50011 Ames Laboratory-U.S. DOE, Iowa State University, Ames, Iowa 50011
C. M. Soukoulis
Affiliation:
Microelectronics Research Center, and Department of Physics, Iowa State University, Ames, Iowa 50011 Ames Laboratory-U.S. DOE, Iowa State University, Ames, Iowa 50011
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Abstract

The mechanisms of the Staebler-Wronski effect are investigated by examining the stability of computer-generated amorphous hydrogenated silicon networks with a molecular dynamics approach. Models with both monohydride and dihydride species are examined. A new Si-H interatomic potential is utilized for the simulations. A localized excitation is used to model the non-radiative transfer of photo-excited carrier energy to the lattice. The a-Si:H model with only monohydride species is stable to bond-breaking excitations. The a-Si:H model with both monohydride and dihydride species is less stable and exhibits, after local excitations, higher energy dangling bond states that can however be easily annealed away.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 99
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).CrossRefGoogle Scholar
[2] Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B 32, 23 (1985).CrossRefGoogle Scholar
[3] Adler, D., J. Phys. (Paris) Colloq. 42, C4–3 (1981).CrossRefGoogle Scholar
[4] Pantelides, S. T., Phys. Rev. B 36, 3479 (1987).CrossRefGoogle Scholar
[5] Zhang, S. B., Jackson, W. B., and Chadi, D. J., Phys. Rev. Lett. 65, 2575 (1990).CrossRefGoogle Scholar
[6] Jackson, W., Phys. Rev. B 41, 10257 (1990).CrossRefGoogle Scholar
[7] Street, R. A., Solar Cells and Proc. Solar Energy Research Institute a-Si:H Program Review, to be published.Google Scholar
[8] Redfield, D. and Bube, R. H. Phys. Rev. Lett. 65, 464 (1990).Google Scholar
[9] Guttmann, L. and Fong, C. Y., Phys. Rev. B 26, 6756 (1982).CrossRefGoogle Scholar
[10] Kwon, I., Biswas, R., and Soukoulis, C. M., Phys. Rev. B 43, 1859 (1991).Google Scholar
[11] Biswas, R., Kwon, I., Soukoulis, C. M., Phys. Rev. B Rapid Communication, in press.Google Scholar
[12] The form of the potential defined in Ref.[10] was used with the parameters for the two-body potential being A1 = 0.1113967 × 104 eV, A 2 = -0.7 × 103 eV, λ1 = 2.7801 Å-1, and λ2 = 2.3616Å-1. Parameters of the three-body potential are BH = 22.6526eV, αH = 0.60334Å-2, γc2 = 1.8Å, and μ2 = 0.2Å.Google Scholar