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a-Si:H TFTs Made on Polyimide Foil by PE-CVD at 150°C

Published online by Cambridge University Press:  10 February 2011

H. Gleskova ,
S. Wagner  and
Z. Suo
H. Gleskova
Affiliation:
Princeton University, Department of Electrical Engineering
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering
Z. Suo
Affiliation:
Princeton University, Department of Mechanical and Aerospace Engineering, Princeton, NJ 08544
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Abstract

We have fabricated high-performance amorphous silicon thin-film transistors (a-Si:H TFTs) on 2 mil. (51 µm) thick polyimide foil substrates. The TFT structure was deposited by r.f.-excited plasma enhanced chemical vapor deposition (PECVD). All TFT layers, including the gate silicon nitride, the undoped, and the n+ amorphous silicon were deposited at a substrate temperature of 150°C. The transistors have inverted-staggered back-channel etch structure. The TFT off-current is ∼ 10−12 A, the on-off current ratio is > 107, the threshold voltage is 3.5 V, the sub-threshold slope is ∼ 0.5V/decade, and the linear-regime mobility is ∼ 0.5 cm2V−1s−1. We compare the mechanical behavior of a thin film on a stiff and on a compliant substrate. The thin film stress can be reduced to one half by changing from a stiff to a compliant substrate. A new equation is developed for the radius of curvature of thin films on compliant substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 73
Copyright
Copyright © Materials Research Society 1998

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References

1. Feng, M.S., Liang, C.W., and Tseng, D., J. Electrochem. Soc. 141, 1040 (1994).Google Scholar
2. McCormick, C.S., Weber, C.E., Abelson, J.R., and Gates, S.M., Appl. Phys. Lett. 70, 226 (1997).Google Scholar
3. Gates, S.M., in Amorphous and Microcrystalline Silicon Technology - 1997, edited by Wagner, S., Hack, M., Schiff, E.A., Schropp, R. and Shimizu, I. (Mat. Res. Soc. Proc. 467, Pittsburgh, PA, 1997), pp. 843–849.Google Scholar
4. Evans, A.G. and Hutchinson, J.W., Acta Materialia 43, 2507 (1995).Google Scholar
5. Timoshenko, S. P. and Goodier, J. N., Theory of Elasticity (McGraw-Hill, New York, 1970).Google Scholar
6. Finot, M. and Suresh, S., J. Mech. Phys. Solids 44, 683 (1996).Google Scholar