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The As-Grown Microtopologies of Solution Grown GaAs (001) Vicinal Surfaces

Published online by Cambridge University Press:  15 February 2011

T. Marek ,
H.P. Strunk ,
E. Bauser  and
Y.C. Lu
T. Marek
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl VII, Cauerstr. 6, 91058 Erlangen, Germany
H.P. Strunk
Affiliation:
Universität Erlangen-Nürnberg, Institut für Werkstoffwissenschaften, Lehrstuhl VII, Cauerstr. 6, 91058 Erlangen, Germany
E. Bauser
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Y.C. Lu
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany.
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Abstract

The observations of the as-solution-grown GaAs (001) vicinal surfaces yield three kinds of Microtopologies. Each of them develops in a certain range of growth temperature. In a low temperature range (492° C…600° C) we observe parallel growth steps with heights of one Monolayer. In a medium range, a network consisting of two sets of growth steps with larger heights is observed. At high growth temperatures (780° C…850° C) we find growth surfaces that are atomically rough. IMplications of these findings for modelling the crystal growth will be discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 615
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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