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Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

Published online by Cambridge University Press:  21 March 2011

Aihua Dan ,
Arthur F. W. Willoughby ,
Janet M. Bonar ,
Barry M. McGregor ,
Mark G. Dowsett  and
Terry J. Ormsby
Aihua Dan
Affiliation:
Materials Research Group, School of Engineering, University of Southampton, Southampton, UK
Arthur F. W. Willoughby
Affiliation:
Materials Research Group, School of Engineering, University of Southampton, Southampton, UK
Janet M. Bonar
Affiliation:
Department of Electronics and Computer Science, School of Engineering, University of Southampton, Southampton, UK
Barry M. McGregor
Affiliation:
Department of Engineering, University of Cambridge, UK
Mark G. Dowsett
Affiliation:
Department of Physics, University of Warwick, Coventry, UK
Terry J. Ormsby
Affiliation:
Department of Physics, University of Warwick, Coventry, UK
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Abstract

The effect of point defect injection on the diffusion of antimony and boron in silicon and silicon-germanium alloys has been studied by comparison of inert with injection diffusions. In this work, Sb and B in Si were used as control wafers to investigate Sb and B diffusion behavior in Si0.9Ge0.1. The point defect injection technique was carried out by rapid thermal annealing (RTA) Sb and B in Si and Si0.9Ge0.1 samples with the various surface coatings in either oxygen or ammonia atmospheres to inject either interstitial or vacancy defects. The diffusion profiles for as-grown and RTA annealed samples were measured by Secondary Ion Mass Spectrometry (SIMS). Diffusivities for B in Si and Si0.9Ge0.1 were obtained using computer simulations of the measured boron profiles for their annealed samples. Sb diffusion in Si and Si0.9Ge0.1 was found enhanced by vacancy injection and retarded by interstitial injection. The enhanced B diffusion in Si and Si0.9Ge0.1 was found by interstitial injection. These results confirm that Sb diffusion in Si0.9Ge0.1 is primarily dominated by vacancy-mediated mechanism, while B diffuses in Si0.9Ge0.1 by an interstitially mediated mechanism. The effect of the RTA diffusion time on the B diffusion in Si and Si0.9Ge0.1 has also been investigated. The diffusivity versus diffusion time of B in Si and Si0.9Ge0.1 for inert and injection samples is presented. It was found that the shorter annealing time had the faster diffusion. This suggested that it caused by transient diffusion effect arising from point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J8.2
Copyright
Copyright © Materials Research Society 2001

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References

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