Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-02-09T20:04:30.524Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing of Metastable Recombination Centers in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Jong-Hwan Yoon  and
Yoon-Zik Lee
Jong-Hwan Yoon
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200–701, Republic of Korea
Yoon-Zik Lee
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Chunchon, Kangwon-Do 200–701, Republic of Korea
Get access

Abstract

We report results on the annealing behaviors of light- and deposition-induced metastable recombination centers, as measured by steady-state photoconductivity, in undoped hydrogenated amorphous silicon. The relaxation time inferred from the stretched-exponential time law reveals a thermally activated behavior, and the activation energies are nearly identical in both (Ea=1.1eV). This value is much less than that of the light-induced darkconductivity relaxation (Ea=1.7eV) measured simultaneously with photoconductivity. While in the deposition-induced case both activation energies of dark- and photoconductivity relaxation time are identical. These results support that there is more than one kind of defect created by light exposure, and at least, as considering activation energies for annealing defects, the light-induced recombination center differ from other metastable defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 413
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. L. and Wronski, C.R., Appl. Phys. Lett. 31, 292(1977)Google Scholar
2. Redfield, D., Appl. Phys. Lett. 52, 493(1989)Google Scholar
3. Dersch, H., Schweitzer, L., and Stuke, J., Phys. Rev. B28, 4678(1983)CrossRefGoogle Scholar
4. Pantelides, S. T., Phys. Rev. B36, 3479(1987)CrossRefGoogle Scholar
5. Dersch, H., Stuke, J., and Beichler, J., Appl. Phys. Lett. 38, 456(1981)Google Scholar
6. Street, R. A., Phil. Mag. B46, 273(1982)Google Scholar
7. Han, D. and Fritzsche, H., J. Non-Cryst. Solids 59&69, 397(1983)CrossRefGoogle Scholar
8. Wronski, C. R. and Daniel, R. E., Phys. Rev. B23, 794(1981)Google Scholar
9. Guha, S., Huang, C. Y., and Hudgens, S. J., Appl. Phys. Lett. 45, 50(1984)Google Scholar
10. Konenkamp, R. and Wild, E., Phys. Rev. B42, 5887(1990)CrossRefGoogle Scholar
11. Kakalios, J., Street, R.A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037(1987)Google Scholar
12. Jackson, W. B. and Kakalios, Phys. Rev. B37, 1020(1988)Google Scholar
13. Parsons, G. N., Wang, C., William, M. J., and Lucovsky, G., Appl. Phys. Lett. 56, 1895(1990)Google Scholar
14. Shepard, K., Smith, Z. E., Aljishi, S., and Wagner, S., Appl. Phys. Lett. 53, 1644(1988)CrossRefGoogle Scholar
15. Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B32, 23(1985)Google Scholar