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Annealing effects on metal-ZnO interface for improvement performance of Thin-film Transistors

Published online by Cambridge University Press:  11 February 2015

Miguel A. Dominguez ,
Francisco Flores ,
Adan Luna ,
Salvador Alcantara ,
Javier Martinez ,
Jose A. Luna-Lopez ,
Pedro Rosales  and
Claudia Reyes
Miguel A. Dominguez*
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Francisco Flores
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Adan Luna
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Salvador Alcantara
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Javier Martinez
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Jose A. Luna-Lopez
Affiliation:
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autonoma de Puebla (BUAP), Puebla, 72570, Mexico.
Pedro Rosales
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, Z.P. 72840, Mexico.
Claudia Reyes
Affiliation:
National Institute for Astrophysics, Optics and Electronics (INAOE), Electronics Department, Luis Enrique Erro No. 1, Puebla, Z.P. 72840, Mexico.
*
*E-mail: madominguezj@gmail.com.
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Abstract

In this work, the annealing effects at 180°C in Aluminum-ZnO contacts as function of time were studied. Also, the application in TFTs of ZnO films obtained at low-temperature (200°C) are presented. The ZnO films obtained by ultrasonic Spray Pyrolysis at 200 °C were deposited over Aluminum contacts on SiO2/Si wafers to demonstrate the use of active layer in thin-film transistors. The results show that an improvement can be obtained in metal-ZnO interfaces by low-temperature annealing treatments. However, long annealing time degrade the metal-ZnO interface and may affect the electrical performance of the device.

Keywords

electrical propertiesthin filmspray pyrolysis
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1731: Symposium O – Oxide Semiconductors , 2015 , mrsf14-1731-o03-01
Copyright
Copyright © Materials Research Society 2015 

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References

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