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Annealing Effects in Low- and High-Stress Silicon Ribbon

Published online by Cambridge University Press:  28 February 2011

K. A. Dumas ,
A. Briglio Jr.  and
L. J. Cheng
K. A. Dumas
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive; Pasadena, California 91109
A. Briglio Jr.
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive; Pasadena, California 91109
L. J. Cheng
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology 4800 Oak Grove Drive; Pasadena, California 91109
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Abstract

X-ray topography and minority carrier lifetime measurements were used to study the structural and electrical properties in silicon dendritic web ribbon. The effects of annealing on the material quality of high- and lowstressribbon were investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 395
Copyright
Copyright © Materials Research Society 1986

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References

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