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Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

Published online by Cambridge University Press:  10 February 2011

P. M. Mooney ,
J. O. Chu ,
J. A. Ott ,
J. L. Jordan-Sweet ,
B. S. Meyerson ,
W. B. Dubbelday ,
I. Lagnado  and
K. L. Kavanagh
P. M. Mooney
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. O. Chu
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. A. Ott
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
J. L. Jordan-Sweet
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
B. S. Meyerson
Affiliation:
IBM Research Division, T.J.Watson Research Center, Yorktown Heights, NY 10598
W. B. Dubbelday
Affiliation:
Naval Space and Warfare Systems Center, San Diego, CA 92152 ECE Department, UC San Diego, La Jolla, CA 92093
I. Lagnado
Affiliation:
Naval Space and Warfare Systems Center, San Diego, CA 92152
K. L. Kavanagh
Affiliation:
ECE Department, UC San Diego, La Jolla, CA 92093
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Abstract

Si/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 55
Copyright
Copyright © Materials Research Society 1998

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