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Analyses of the Grain Boundary Misorientation and Oxygen Content of Bulk Processed YBa2Cu3O7-δ

Published online by Cambridge University Press:  10 February 2011

Jenn-Yue Wang ,
Alexander H. King ,
Yimei Zhu ,
Yuan-Liang Wang  and
Mas Aki Suenaga
Jenn-Yue Wang
Affiliation:
Materials Science Division, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973 Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794
Alexander H. King
Affiliation:
Department of Materials Science and Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794
Yimei Zhu
Affiliation:
Materials Science Division, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
Yuan-Liang Wang
Affiliation:
Materials Science Division, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
Mas Aki Suenaga
Affiliation:
Materials Science Division, Department of Applied Science, Brookhaven National Laboratory, Upton, NY 11973
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Abstract

The grain boundary misorientation distribution of 203 grain boundaries in bulk processed high Tc superconductor YBa2Cu3O7-δ with five processing conditions, was studied. Two complementary analytical approaches, Grain Boundary Misorientation Distribution (GBMD) from the random description, using a hypothesis test and X 2 analysis, and Grain Boundary Character Distribution (GBCD), using the Coincidence Site Lattice (CSL) model, were applied. The GBMD and GBCD both showed grain boundary evolution departing from a random distribution above 935°C processing temperature. The GBCD analyses indicated an approximately linear increase in the population of CSL-related boundaries, among which the tetragonal CSL (c/a ≠ 3) boundaries grew in the same trend while orthorombic boundaries (c/a = 3) became stagnated. The results from comparing the corresponding GBCD and volume averaged J c for each batch indicated that the tetragonal CSL boundaries were oxygen deficient and accounted for, among other current limiting factors, lower current carrying ability.

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References

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