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An Optical Approach to Evaluating the Effects of Chlorine on the Quality Of Si/SiO2 Interfaces

Published online by Cambridge University Press:  15 February 2011

Julia Sherry ,
John Lowell ,
Tim Hossain  and
Damon Debusk
Julia Sherry
Affiliation:
Advanced Micro Devices, 5204 E. Ben White Blvd, Austin, TX. 78741
John Lowell
Affiliation:
Advanced Micro Devices, 5204 E. Ben White Blvd, Austin, TX. 78741
Tim Hossain
Affiliation:
Advanced Micro Devices, 5204 E. Ben White Blvd, Austin, TX. 78741
Damon Debusk
Affiliation:
Advanced Micro Devices, 5204 E. Ben White Blvd, Austin, TX. 78741
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Abstract

In CMOS, the addition of chlorine particularly in TCA form to the growth of thermal oxides in logic technologies is well-known and pervasive. In addition to the increasing environmental concerns of chlorine use, one of the important parameters is the amount of metallic contamination due to transition metals such as Fe in the Si, and alkali metals like Na in the oxide since these phenomena effect both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. In this paper we report on the application of high-injection, frequency based optical surface photovoltage (SPV) and a more recent technique known as a contact potential difference (CPD) to both quantify and qualify as-grown oxides on CZ P-type silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 429
Copyright
Copyright © Materials Research Society 1996

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References

1. DeBusk, D. and Ruby, S., Sixth Annual Dielectrics and CVD Metalization Symposium, Schumacher, San Diego, Feb. 1994, p. 301.Google Scholar
2. DeBusk, D., Lagendijk, A., and Porter, C., MICRO, September 1995, p. 39.Google Scholar
3. DeBusk, D., Ruby, S., and Lagendijk, A., Semiconductor International, June 1995, p. 167.Google Scholar
4. Mertens, P. W., Vermeir, B., Depas, M., McGeary, M.J., Sees, J., O'Brien, S. C., Meuris, M., Heyns, M. M., and Graf, D., Proc. Inst. of Environmental Science Technical Meeting, 1995.Google Scholar
5. Vermeire, B., Martens, P. W., McGeary, M. J., Kenis, K., Heyns, M. M., Schaekers, M., and Lubbers, A., Proc. Second Intl. Symp., on Ultra-Clean Processing on Silicon Surfaces, 1994, p. 143.Google Scholar
6. Yaneda, K., Hagiwara, K., Oishi, H., and Todokoro, Y., J. Electrochem. Soc. 142 4304 (1995).Google Scholar
7. Edelman, P., Lagowski, J., and Jastrzebski, L., Materials Research Soc. Proc., San Francisco, April 1992.Google Scholar
8. Nauka, K., Ext. Abst. Electrochem. Soc. Mtg., Hawaii, May 1993.Google Scholar
9. Kontkiewicz, A., et.al.., Proc. DRIP 5 Conf., Satander, Spain, Sept. 1993.Google Scholar
10. Edelman, P., Hoff, A. M., Jastrzebski, L., and Lagowski, J., SPIE Tech. Conf. 2337, Austin, October, 1994.Google Scholar
11. Nauka, K., Semiconductor Characterization, ed. Bullis, , Seiler, and Diebold, , AIP Press, New York, 1996.Google Scholar
12. SPV Tools Users Manual, Semiconductor Diagnostics, Inc., Tampa, 1994.Google Scholar
13. Deal, B., IEEE Trans. Elec. Dev., ED–27, 606 (1980).Google Scholar
14. Lowell, J., Werner, V., and Jastrzebski, L., Materials Research Soc. Proc., San Francisco, April 1993.Google Scholar