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An NMR Study of Hydrogen in Si02 Films on Silicon

Published online by Cambridge University Press:  25 February 2011

David H. Levy  and
K. K. Gleason
David H. Levy
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
K. K. Gleason
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have used solid state nuclear magnetic resonance (NMR) spectroscopy to study both “wet” and “dry” thermally grown films of SiO2 on silicon substrates. For the 5000 § wet film, grown at 1050 °C we observed a single Lorentzian line of 6 kHz HWHM (half width at half maximum). For the 500 § dry film, we observed a convolution of two lines: a) a Lorentzian of 4 kHz HWHM and b) a Gaussian of 20 kHz HWHM. The hydrogen distributions in both oxides are interpreted as a function of these lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 197
Copyright
Copyright © Materials Research Society 1990

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References

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