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An Investigation of Light Induced Defects in Aluminum Nitride Ceramics

Published online by Cambridge University Press:  25 February 2011

J. H. Harris  and
R. A. Youngman
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, OH 44128
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, 4440 Warrensville Center Road, Cleveland, OH 44128
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Abstract

It has been observed that aluminum nitride (AIN) ceramics exhibit a significant photo-darkening when exposed to UV or X-ray radiation, though the origin of this effect has never been understood. In this study, the optical character of these defects is investigated utilizing a UV-pump, visible-probe arrangement, where very large changes ΔT in the probe transmission T (induced absorption) are observed after excitation (Δ/T-0.60). These experiments reveal that the photo-darkening is due to the creation of light induced defects, with an energy level deep in the AIN bandgap. Utilizing these results, a light induced defect formation model is proposed which is consistent with the known defect chemistry of this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 451
Copyright
Copyright © Materials Research Society 1992

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References

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