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An Investigation into the Use of a Diffusion Barrier in the Microwave Plasma Assisted Chemical Vapor Deposition of Diamond on Iron Based Substrates

Published online by Cambridge University Press:  25 February 2011

Paul S. Weiser ,
S. Prawer ,
A. Hoffman ,
R. Manory ,
P. J. K. Paterson  and
S-A. Stuart
Paul S. Weiser
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria 3052, Australia.
S. Prawer
Affiliation:
School of Physics, University of Melbourne, Parkville, Victoria 3052, Australia.
A. Hoffman
Affiliation:
Australian Nuclear Science and Technology Organization, PMB 1, Menai, NSW 2234.
R. Manory
Affiliation:
Metallurgical Engineering, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, Victoria, 3001, Australia.
P. J. K. Paterson
Affiliation:
Department of Applied Physics, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, Victoria, 3001, Australia.
S-A. Stuart
Affiliation:
Department of Applied Physics, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne, Victoria, 3001, Australia.
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Abstract

The growth of CVD diamond onto iron based substrates is complicated by preferential soot formation and carbon diffusion into the substrate, leading to poor quality films and poor adhesion. One strategy to overcome these problems is the use of thin film barrier layers between the Fe substrate and the growing diamond film. The present investigation reports the growth of diamond films on Fe substrates coated with thin films of TiN. The effectiveness of the TiN layers in inhibiting C diffusion into the Fe substrate was investigated by Auger measurements of the C distribution within the TiN layer, through the interface and into the substrate both before and after diamond deposition.

The results show that a layer of TiN only 250Å thick is sufficient to inhibit soot formation and C diffusion into the Fe bulk, as well as providing nucleation sites for CVD diamond growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 63
Copyright
Copyright © Materials Research Society 1992

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References

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