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An Investigation into the Growth of Lead Titanate by MOCVD Using a Pyrolytic and a Sputter Assisted Plasma Process

Published online by Cambridge University Press:  28 February 2011

Crofton J. Brierley ,
Laurence Considine ,
Rajinder S. Sethi  and
Roger W. Whatmore
Crofton J. Brierley
Affiliation:
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northamptonshire. NN12 8EQ. U.K.
Laurence Considine
Affiliation:
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northamptonshire. NN12 8EQ. U.K.
Rajinder S. Sethi
Affiliation:
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northamptonshire. NN12 8EQ. U.K.
Roger W. Whatmore
Affiliation:
Plessey Research Caswell Limited, Allen Clark Research Centre, Caswell, Towcester, Northamptonshire. NN12 8EQ. U.K.
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Abstract

The thin film growth of PbTiO3 by MOCVD has been investigated using both a pyrolytic process and a sputter assisted plasma deposition process. In the first process, lead tertiary butoxide and titanium iso-propoxide are introduced to a low pressure reactor simultaneously to deposit thin films containing lead and titanium onto a hot substrate (400–500 °C). In the alternative process lead is sputtered from a magnetron target in the presence of titanium isopropoxide vapour. Thin films containing lead and titanium are deposited onto a substrate which need not be heated. X-ray and EDAX analysis indicate the presence of Ti02 and elemental lead in the as grown layers. Oxygen annealing of ihese layers at 900° and 1100°C leads to the formation of polycrystalline PbTiO3 and where the substrate is silicon, a PbO/SiO2 glass phase.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 779
Copyright
Copyright © Materials Research Society 1987

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References

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