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Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature

Published online by Cambridge University Press:  26 February 2011

R. E. Rocheleau ,
R. M. Tullman ,
D. E. Albright  and
S. S. Hegedus
R. E. Rocheleau
Affiliation:
Institute of Energy Conversion University of Delaware, Newark DE 19716
R. M. Tullman
Affiliation:
Institute of Energy Conversion University of Delaware, Newark DE 19716
D. E. Albright
Affiliation:
Institute of Energy Conversion University of Delaware, Newark DE 19716
S. S. Hegedus
Affiliation:
Institute of Energy Conversion University of Delaware, Newark DE 19716
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Abstract

The effects of substrate temperature and hydrogen dilution on mobilitylifetime product and hydrogen bonding are reported for amorphous silicongermanium films with bandgaps from 1.1 to 1.74 eV deposited by Hg-sensitized photo-CVD. The ratio of dihydride to monohydride bonding and preferential H attachment to silicon both decreased with hydrogen dilution. The best films were deposited with hydrogen dilution at substrate temperatures between 230 and 250 ° C. Model equations used to calculate radical fluxes to the substrate are described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 653
Copyright
Copyright © Materials Research Society 1988

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