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Amorphous silicon-germanium (a-Si0.01Ge0.99:H) doped with phosphorous deposited by LF PECVD and its electrical and optical characteristics

Published online by Cambridge University Press:  16 May 2012

N. Delgadillo ,
A. Kosarev ,
A. Torres  and
B. Gonzales
N. Delgadillo
Affiliation:
Electronics Systems, University Autonomous of Tlaxcala, Calzada Apizaquito, Km. 1.5, Apizaco, Tlaxcala, 93000, Mexico.
A. Kosarev
Affiliation:
Electronics, National Institute for Astrophysics, Optics and Electronics, L.E. Erro No.1, Tonantzintla, Puebla, 72840, Mexico.
A. Torres
Affiliation:
Electronics, National Institute for Astrophysics, Optics and Electronics, L.E. Erro No.1, Tonantzintla, Puebla, 72840, Mexico.
B. Gonzales
Affiliation:
Electronics Systems, University Autonomous of Tlaxcala, Calzada Apizaquito, Km. 1.5, Apizaco, Tlaxcala, 93000, Mexico.
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Abstract

Amorphous silicon-germanium (a-Si0.01Ge0.99:H) thin film, practically amorphous germanium with small concentration of silicon, were deposited by the low frequency PECVD technique under different flow gas of phosphine in the range of QPH3 = 20 to 100 sccm. In this range the phosphorous concentration in gas phase was calculated as XP= 4 to 20 % which resulted in a content in solid phase [P]sol=0.12% - 0.4%. The P content of the solid phase was measured by SIMS profiling and it was also observed a preferential incorporation of phosphorous in the range of [P]sol=0.12% - 0.3%. Hydrogen concentration in the films was determined from FTIR and SIMS measurements. The activation energy was determined by measuring the temperature dependence of conductivity in DC regime in a vacuum thermostat. For the a-Si0.01Ge0.99:H films it is found that the activation energy have a minimum, (Ea= 0.15eV), its conductivity at room temperature have a maximum and there is a minimum of of both band tail and deep localized state for a phosphorous incorporation in solid phase [P] =0.28%.

Keywords

plasma-enhanced CVD (PECVD) (deposition)electrical propertiesoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 409 - 414
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Wickboldt, P., Pang, D., Paul, W., J. Appl. Phys, vol. 81, no. 9, pp. 6252–6267 (1997).CrossRefGoogle Scholar
Chou, Y.P. and Lee, S. C., J. Appl. Phys, vol. 83, no. 8, pp. 4111–4123, (1998).CrossRefGoogle Scholar
Budaguan, B. G., Sherchenkov, A. A., Berdnikov, A. E., Metselaar, J. W., and Aivazov, A. A., Mater. Res. Soc. Symp. Proc. 557, (1999) pp. 43–48.CrossRefGoogle Scholar
Fedala, A., Cherfi, R., Aoucher, M., and Mohammed-Brahim, T., Materials Science in Semiconductor Processing, vol. 9, no. 4-5, pp. 690–693, 2006.CrossRefGoogle Scholar
Kosarev, A., Torres, A., Hernandez, Y., Ambrosio, R., Zuniga, C., Felter, T., Asomoza, R, Kudriavtsev, Y., Silva-Gonzales, R., Gomez-Barojas, E., Ilinski, A., Abromov, A. S., J. Mater. Res., 21(1), 88–104 (2006).CrossRefGoogle Scholar
Budagian, B. G., Sherechenkov, A. A., Gourbulin, G. L., Chernomordic, V. D.. Phys., 84(6), 3386 (1998).Google Scholar
Dalal, V. L, Solid State and Material Science, 6, 455 (2002).CrossRefGoogle Scholar
Subramanian, Vivek, Student Member, IEEE, and Saraswat, Krishna C., Fellow, IEEE. Optimization of Silicon-Germanium TFT’s Through. 1998.Google Scholar