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Amorphous silicon-germanium (a-Si0.01Ge0.99:H) doped with phosphorous deposited by LF PECVD and its electrical and optical characteristics

Published online by Cambridge University Press:  16 May 2012

N. Delgadillo ,
A. Kosarev ,
A. Torres  and
B. Gonzales
N. Delgadillo
Affiliation:
Electronics Systems, University Autonomous of Tlaxcala, Calzada Apizaquito, Km. 1.5, Apizaco, Tlaxcala, 93000, Mexico.
A. Kosarev
Affiliation:
Electronics, National Institute for Astrophysics, Optics and Electronics, L.E. Erro No.1, Tonantzintla, Puebla, 72840, Mexico.
A. Torres
Affiliation:
Electronics, National Institute for Astrophysics, Optics and Electronics, L.E. Erro No.1, Tonantzintla, Puebla, 72840, Mexico.
B. Gonzales
Affiliation:
Electronics Systems, University Autonomous of Tlaxcala, Calzada Apizaquito, Km. 1.5, Apizaco, Tlaxcala, 93000, Mexico.
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Abstract

Amorphous silicon-germanium (a-Si0.01Ge0.99:H) thin film, practically amorphous germanium with small concentration of silicon, were deposited by the low frequency PECVD technique under different flow gas of phosphine in the range of QPH3 = 20 to 100 sccm. In this range the phosphorous concentration in gas phase was calculated as XP= 4 to 20 % which resulted in a content in solid phase [P]sol=0.12% - 0.4%. The P content of the solid phase was measured by SIMS profiling and it was also observed a preferential incorporation of phosphorous in the range of [P]sol=0.12% - 0.3%. Hydrogen concentration in the films was determined from FTIR and SIMS measurements. The activation energy was determined by measuring the temperature dependence of conductivity in DC regime in a vacuum thermostat. For the a-Si0.01Ge0.99:H films it is found that the activation energy have a minimum, (Ea= 0.15eV), its conductivity at room temperature have a maximum and there is a minimum of of both band tail and deep localized state for a phosphorous incorporation in solid phase [P] =0.28%.

Keywords

plasma-enhanced CVD (PECVD) (deposition)electrical propertiesoptical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2012 , 2012 , pp. 409 - 414
Copyright
Copyright © Materials Research Society 2012

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References

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