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Amorphous Si:H Heterojunction Photodiode and its Application to a Compact Scanner

Published online by Cambridge University Press:  28 February 2011

S. Kaneko ,
Y. Kajiwara ,
F. Okumura  and
T. Ohkubo
S. Kaneko
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
Y. Kajiwara
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
F. Okumura
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
T. Ohkubo
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
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Abstract

This paper reports heterojunction photodiode properties and its application to a compact scanner. The photodiode has ITO / p-a-SiC:H / a-Si:H / metal structure. This diode has high photo to dark current ratio and small photocurrent saturation voltage, because of the excellent blocking characteristics for a heterojunction with large built in potential. Moreover, a-Si:H / metal contact has been investigated. A contact linear image sensor has been fabricated using the heterojunction photodiode array and compact optical system. Performance tests showed excellent results. Good reproduced images have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 423
Copyright
Copyright © Materials Research Society 1985

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References

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