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Amorphization of Silicon by Boron Ion Implantation

Published online by Cambridge University Press:  28 February 2011

Y. Shih ,
J. Washburn ,
R. Gronsky  and
E.R. Weber
Y. Shih
Affiliation:
now at IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. Washburn
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. Gronsky
Affiliation:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
E.R. Weber
Affiliation:
Dept. of Materials Science & Min. Engr., Univ. of California, Berkeley, CA 94720
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Abstract

Amorphization of silicon due to implantation of boron ions which is the lightest element used for I.C. fabrication processes, has been systematically studied for various temperatures, voltages and dose rates. A model for formation of amorphous silicon by light ion implantation is proposed. It is suggested that accumulation of point defects and/or clusters is required at the initial stage of amorphization process. Diinterstitial -divacancy pairs are suggested to be the embryos of amorphous zones formed during implantation at room temperature. Out -diffusion of highly mobile interstitials during amorphization is thought to explain differences in the critical energy for amorphization with low and high energy implantation at liquid nitrogen temperature.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 203
Copyright
Copyright © Materials Research Society 1986

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