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Amorphization Mechanism of Si/Ge Superlattices Upon Ion Implantation

Published online by Cambridge University Press:  15 February 2011

N.A. Sobolev ,
U. Kaiser ,
I.I. Khodos ,
H. Presting  and
U. König
N.A. Sobolev
Affiliation:
Department of Physics, University of Aveiro, 3810 Aveiro, Portugal, sobolev@fis.ua.pt
U. Kaiser
Affiliation:
Institute of Solid State Physics, Friedrich Schiller University, 07743 Jena, Germany
I.I. Khodos
Affiliation:
Institute of Microelectronics Technology and High Purity Materials, 142432 Chernogolovka, Russia
H. Presting
Affiliation:
Daimler Benz Research Center, 89013 Ulm, Germany
U. König
Affiliation:
Daimler Benz Research Center, 89013 Ulm, Germany
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Abstract

The damage production in the Si9Ge6 superlattices (SLs) upon implantation of 150 keV Ar+ ions at 300 K was studied my means of the cross-sectional transmission electron microscopy (XTEM) and electron microdiffraction. It was found that the amorphization occurs in a narrow dose range of (1 – 2) × 1014 cm-2 via accumulation of point defects. The conclusion drawn earlier (Mater. Sci. Forum 248-249, 289 (1997)) on the coherent amorphization of the Si and Ge layers in the SLs was confirmed. Possible mechanisms of the layer interaction leading to the observed behavior are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 91
Copyright
Copyright © Materials Research Society 1999

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