Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-02-05T14:42:09.678Z Has data issue: false hasContentIssue false
  • English
  • Français

Ambipolar Field Effect Transistor

Published online by Cambridge University Press:  28 February 2011

H. Pfleiderer  and
W. Kusian
H. Pfleiderer
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Federal Republic of Germany
W. Kusian
Affiliation:
Siemens Research Laboratories, Otto-Hahn-Ring 6, 8000 München 83 Federal Republic of Germany
Get access

Abstract

The characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 361
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Neudeck, G.W. and Malhotra, A.K., Solid-State Electronics 19, 721 (1976)CrossRefGoogle Scholar
2. Matsumura, M. and Nara, Y., J.Appl.Phys. 51, 6443 (1980)CrossRefGoogle Scholar
3. Suzuki, T., M.Hirose and Osaka, Y., Jap.J.Appl.Phys. 21, L315 (1982)CrossRefGoogle Scholar
4. Stoica, T., J.Physique 42, C4–407 (1981)Google Scholar
5. GrdInewald, M., Weber, K., Fuhs, W. and Thomas, P., J.Physique 42, C4–523 (1981)Google Scholar