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Aluminum Spiking Mechanism in Contact Holes Studied by High-Resolution Analytical TEM

Published online by Cambridge University Press:  10 February 2011

H. Cerva ,
V. Klüppel ,
H. J. Barth  and
H. Helneder
H. Cerva
Affiliation:
Siemens AG, Corporate Technology, Otto Hahn Ring 6, D-81730 München, Germany
V. Klüppel
Affiliation:
Siemens AG, Corporate Technology, Otto Hahn Ring 6, D-81730 München, Germany
H. J. Barth
Affiliation:
Siemens AG, Semiconductor Group, Otto Hahn Ring 6, D-81730 München, Germany
H. Helneder
Affiliation:
Siemens AG, Semiconductor Group, Otto Hahn Ring 6, D-81730 München, Germany
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Abstract

Al-spiking in contacts to Si were studied on a microscopic scale by a detailed cross sectional TEM analysis. Electron spectroscopic imaging and energy dispersive x-ray microanalysis with a I nm high-current electron probe formed by a field emission gun helped to identify the Al-diffusion paths and the reaction mechanisms which lead to contact failure. Combinations of advanced PVD-Ti/TiN barrier layers and cold/hot or high-pressure AlSiCu-fills revealed that the highly rugged TiN barrier sidewalls and thick Ti sidewall layers are the weak points which cause Al-spiking.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 115
Copyright
Copyright © Materials Research Society 1998

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