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Alternative Reactants for the Laser-Assisted Deposition of Silicon Nitride on Metals.

Published online by Cambridge University Press:  28 February 2011

Julian P. Partridge  and
Peter R. Strutt
Julian P. Partridge
Affiliation:
The University of Connecticut, Institute of Materials Science, Box U-136, Storrs, CT 06268.
Peter R. Strutt
Affiliation:
The University of Connecticut, Institute of Materials Science, Box U-136, Storrs, CT 06268.
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Abstract

An alternative approach is described for the laser synthesis of silicon nitride layers using relatively innoccuous, non-pyrophoric reactants such as hexamethyltrisilazane. The pyrolysis process produces 2000 A particles of silicon nitride and the reaction mechanisms are invesigated using infrared spectroscopic analyses. The morphology of the deposited layer is critically dependent on process conditions due to considerable differences in the coupling efficiencies of the nitride deposit and the underlying metallic substrate. The existence of a laser-generated plasma above the metal is discussed in the light of microstructural features observed.

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