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Ag Films Deposited by Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  15 February 2011

Zhong-Min Ren ,
Yuan-Cheng Du ,
Zhi-Feng Ying ,
Xia-Xing Xiong ,
Mao-Qi He  and
Fu-Ming Li
Zhong-Min Ren
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
Yuan-Cheng Du
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
Zhi-Feng Ying
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
Xia-Xing Xiong
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
Mao-Qi He
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
Fu-Ming Li
Affiliation:
State key joint laboratory for material modification by laser, ion and electron beams, Fudan University, Department of Physics, Shanghai, 200433, China
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Abstract

Ionized cluster beam deposition (ICBD) technique has been used to deposit Ag films on both Si(111) and Si(100) substrates. Sizes of clusters in ionized cluster beam are found to distribute in a range of 100–600 atoms/cluster. X-ray diffraction (XRD), and α-step profile methods are used to analyze the properties of Ag films. As a comparison, Ag films deposited by conventional evaporation are also investigated. Highly textured Ag films with strong (111) orientation on Si (111) have been obtained at high accelerating voltage Va=4kV. The crystallinity and surface flatness of Ag films can be improved by ICBD at high accelerating voltages.

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References

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