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Advanced Thermal Processing of Semiconductor Materials by Flash Lamp Annealing

Published online by Cambridge University Press:  17 March 2011

W. Skorupa ,
D. Panknin ,
M. Voelskow ,
W. Anwand ,
T. Gebel ,
R. A. Yankov ,
Silke Paul ,
Wilfried Lerch  and
The European FLASiC Consortium
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany nanoparc GmbH, Dresden – Rossendorf, Germany
D. Panknin
Affiliation:
Forschungszentrum Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany
M. Voelskow
Affiliation:
Forschungszentrum Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany
W. Anwand
Affiliation:
Forschungszentrum Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden, Germany
T. Gebel
Affiliation:
nanoparc GmbH, Dresden – Rossendorf, Germany
R. A. Yankov
Affiliation:
nanoparc GmbH, Dresden – Rossendorf, Germany
Silke Paul
Affiliation:
Mattson Thermal Products GmbH, Dornstadt, Germany
Wilfried Lerch
Affiliation:
Mattson Thermal Products GmbH, Dornstadt, Germany
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Abstract

The use of flash lamp annealing for processing semiconductor materials is outlined. Specific applications include ultra-shallow junction formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide. It is demonstrated that flash lamp annealing holds great promise as a technique for fabricating novel devices.

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References

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