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Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers

Published online by Cambridge University Press:  10 February 2011

A.Yu. Kuznetsov ,
J. Cardenas ,
B.G. Svensson ,
A. Nylandsted Larsen  and
J. Lundsgaard Hansen
A.Yu. Kuznetsov
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden; kuznet@ele.kth.se
J. Cardenas
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
B.G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
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Abstract

Enhanced Sb diffusion in biaxially compressed Si1-xGex layers is observed. Assuming the prefactors to be stress independent the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.1 and Si0.8Ge0.2 were extracted as 0.4 × 102 exp[−(3.98(eV)±0.12)/kT] and 1.3 × 102 exp[−(3.85(eV)±0.12)/kT] cm2/s, respectively. The activation volume of Sb diffusion in Si1-xGex (× ≤ 0.2) is estimated to be close to Ω, where Ω is the volume corresponding to a silicon lattice site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 435
Copyright
Copyright © Materials Research Society 1998

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References

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