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X-Ray Photoemission Investigation of Excimer Laser Induced Etching of InP

Published online by Cambridge University Press:  21 February 2011

R. Matz ,
J. Meiler  and
D. Haarer
R. Matz
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, FRG
J. Meiler
Affiliation:
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, FRG
D. Haarer
Affiliation:
Universität Bayreuth, Lehrstuhl fOr Experimentalphysik IV, Postfach101251, D-8580 Bayreuth, FRG
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Abstract

ArF excimer laser induced etching of InP in various etch gases (HBr, HCI, CI2) is discussed with regard to its spatial resolution capability. X-ray photoemission spectra and large-area etch rate measurements published before lead to fundamental understanding and interpretation of the characteristics of etched test structures. HBr and HCI require gas phase photodissociation. CI2' in contrast, has the advantage to react spontaneously.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 158: Symposium B – In-Situ Patterning: Selective Area Deposition and Etching , 1989 , 307
Copyright
Copyright © Materials Research Society 1990

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References

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