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XeCl Excimer Laser Annealing Used to Fabricate Poly-Si Tfts

Published online by Cambridge University Press:  28 February 2011

T. Sameshima  and
S. Usui
T. Sameshima
Affiliation:
Sony Corporation Research Center, Yokohama 240, JAPAN
S. Usui
Affiliation:
Sony Corporation Research Center, Yokohama 240, JAPAN
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Abstract

Mo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 26°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

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