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Wet Etching of Ion-implanted GaN Crystals by AZ-400K Photoresist

Published online by Cambridge University Press:  03 September 2012

C.A. Carosella ,
B. Molnar ,
S. Schiestel  and
J.A. Sprague
C.A. Carosella
Affiliation:
Naval Research Laboratory, Washington DC 20375
B. Molnar
Affiliation:
Naval Research Laboratory, Washington DC 20375
S. Schiestel
Affiliation:
George Washington University, Washington, DC
J.A. Sprague
Affiliation:
Naval Research Laboratory, Washington DC 20375
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Abstract

The photoresist developer AZ-400K, commonly used to remove AlN encapsulant layers on GaN crystalline films, is found to also etch certain as-grown GaN films. Even as-grown GaN films, which can not be etched in AZ-400K, however can be etched if amorphized by ion implantation. Etch rates of as high as 450 Å/min. were observed. The etching proceeds linearly in GaN in the first few minutes to a depth corresponding to the depth of the amorphous region. Subsequently, the etching rate saturates. Annealing of the highly amorphized samples up to 1000°C for one minute in a N2/H2 gas mixture does not reduce the etch rate, but for lower doses we observed a reduction of the etch rate. Observations of etching depth under various ion-implanted conditions could be correlated with the number of displacements per atoms (dpa) required for amorphization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.70
Copyright
Copyright © Materials Research Society 1999

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