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Vibrational Stretching Modes of the Si-H and Si-D Bonds in Amorphous Silicon Nitride

Published online by Cambridge University Press:  17 March 2011

Shu-Ya Lin
Shu-Ya Lin*
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
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Abstract

The vibrational density of states for the SiH(D) and SiH2(D2) groups in amorphous silicon nitride are calculated. The Si-H(D) bond-stretching modes of the SiH2(D2) groups are found to split, with the Si-D bond-stretching mode having larger splitting. The difference between the Si-D bond-stretching frequency of the SiD group and the Si-D asymmetrical stretching frequency of the SiD2 group has about the same value as that of the Si-H bonds. The differences in the effective masses of the Si-H and Si-D bonds and the degrees of the bond-stretching splitting of the SiH2 and SiD2 groups have compensating effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A21.5
Copyright
Copyright © Materials Research Society 2001

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