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A Unified Computational Approach to Oxide Aging Processes

Published online by Cambridge University Press:  10 February 2011

Harold P. Hjalmarson ,
Peter A. Schultz ,
Duane J. Bowman  and
Daniel M. Fleetwood
Harold P. Hjalmarson
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
Peter A. Schultz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
Duane J. Bowman
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
Daniel M. Fleetwood
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87111
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Abstract

In this paper we describe a unified, hierarchical computational approach to aging and reliability problems caused by materials changes in the oxide layers of Si-based microelectronic devices. We apply this method to a particular low-dose-rate radiation effects problem.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 257
Copyright
Copyright © Materials Research Society 1999

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