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Understanding the Correlation of SurfaceSIMS and TXRF Measurements of Surface Metal Contamination on Silicon Wafers

Published online by Cambridge University Press:  10 February 2011

Stephen P. Smith  and
Jenny Metz
Stephen P. Smith
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
Jenny Metz
Affiliation:
Charles Evans and Associates, 301 Chesapeake Drive, Redwood City, CA 94063
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Abstract

A comparison of SurfaceSIMS measurements of surface metal contamination on silicon wafers with TXRF analyses of the same wafers is presented. These two important surface analysis techniques are characterized by differing analytical areas and sampling depths. For Fe, agreement between SurfaceSIMS and TXRF results is good (generally within a factor of two) for silicon wafers from a variety of sources with contamination levels ranging from 8×109 to 2×1015 atoms/cm2. Differences between SurfaceSIMS and TXRF results occur for other elements (such as W and Cu) when the contamination is not uniform across the surface of the wafer (particles are present), or extends a significant depth below the surface of the wafer (as is frequently the case for ion-implanted wafers).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 305
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Smith, S. P., (Mater. Res. Soc. Proc. 386, Pittsburgh, PA 1995), pp. 157–162.Google Scholar
2. Smith, S. P., in Secondary Ion Mass Spectrometry (SIMS X), edited by Benninghoven, A., Hagenhoff, B. and Werner, H. W (John Wiley & Sons, Chichester, 1997) pp. 485–488.Google Scholar